Silicon carbide planar junctionless transistor for low-medium voltage power electronics
نویسندگان
چکیده
منابع مشابه
Low voltage nanoelectromechanical switches based on silicon carbide nanowires.
We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths...
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ژورنال
عنوان ژورنال: Journal of Physics Communications
سال: 2021
ISSN: 2399-6528
DOI: 10.1088/2399-6528/abe592